DIN 50450-2:2025-07
Testing of materials for semiconductor technology - Determination of impurities in carrier gases and dopant gases - Part 2: Determination of Oxygen impurities in Nitrogen, Argon, Helium, Neon and Hydrogen using a galvanic cell / Note: Date of issue 2025-06-20
| Fecha edición: |
2026-03-01
Anulada
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|---|---|
| Fecha cancelación: | 2026-03-01 |
| Idiomas disponibles: | Alemán |
| Resumen: | The method is used to determine the amount of oxygen in the gases of this standard. It determines a proportion between 1 µmol/mol and 10 µmol/mol and can be used to analyze the residual oxygen content in the gases nitrogen, argon, helium, neon and hydrogen. The applicability to other gases and lower detection limits must be checked in each case. |
| Keywords: | Analysis|Argon|Carrier gases|Chemical analysis and testing|Chemicals|Content|Determination of content|Doping agents|Doping gases|Galvanic|Gases|Helium|Hydrogen|Impurities|Materials|Materials testing|Measuring cell|Neon|Nitrogen|Oxygen|Semiconductor engineering|Semiconductor materials|Semiconductor technology|Semiconductors|Sensors|Testing|Volume|Volume measurement |
| ICS: | 71.100.20 - Gases para aplicación industrial, 29.045 - Materiales semiconductores |
| CTN: | |
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Reemplazo Normas |
Es reemplazada por DIN 50450-2:2026-03 |
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