DIN 50450-2:2026-03
Testing of materials for semiconductor technology - Determination of impurities in carrier gases and dopant gases - Part 2: Determination of Oxygen impurities in Nitrogen, Argon, Helium, Neon and Hydrogen using a galvanic cell
| Fecha edición: |
2026-03-01
En Vigor
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| Idiomas disponibles: | Alemán |
| Resumen: | This document specifies a method for the determination of the amount of oxygen in the gases according to this standard. This document covers a proportion determination between 1 µmol/mol and 10 µmol/mol and is applicable for the analysis of the residual oxygen content in the gases nitrogen, argon, helium, neon and hydrogen. |
| Keywords: | Analysis|Argon|Carrier gases|Chemical analysis and testing|Chemicals|Content|Determination of content|Doping agents|Doping gases|Galvanic|Gases|Helium|Hydrogen|Impurities|Materials|Materials testing|Measuring cell|Neon|Nitrogen|Oxygen|Semiconductor engineering|Semiconductor materials|Semiconductor technology|Semiconductors|Sensors|Testing|Volume|Volume measurement |
| ICS: | 71.100.20 - Gases para aplicación industrial, 29.045 - Materiales semiconductores |
| CTN: | |
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Reemplazo Normas |
Reemplaza a DIN 50450-2:1991-03 Reemplaza a DIN 50450-2:2025-07 |
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