DIN 51456:2013-10
Testing of materials for semiconductor technology - Surface analysis of silicon wafers by multielement determination in aqueous analysis solutions using mass spectrometry with inductively coupled plasma (ICP-MS)
| Fecha edición: |
2013-10-01
En Vigor
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| Idiomas disponibles: | Alemán |
| Resumen: | This document specifies a test method for surface analysis for the determination of mass fractions of the elements Al (aluminum), As (arsenic), Ba (barium), Be (beryllium), Ca (calcium), Cd (cadmium), Co (cobalt), Cr (chromium), Cu (copper) , Fe (iron), In (indium), K (potassium), Li (lithium), Mg (magnesium), Mn (manganese), Mo (molybdenum), Na (sodium), Ni (nickel), Pb (lead) , Sb (antimony), Sr (strontium), Ti (titanium), V (vanadium), Zn (zinc) and Zr (zirconium) on silicon wafers using ICP-MS. |
| Keywords: | Chemical analysis and testing|Decomposition|Definitions|Determination procedures|Hydrogen fluoride|ICP|Inductively Coupled Plasma|Mass spectrometry|Materials testing|Methods of analysis|Plasma|Semiconductor slices|Semiconductor technology|Silicon|Silicon slices|Surface properties|Surfaces|Testing|Wafers |
| ICS: | 31.200 - Circuitos integrados. Microelectrónica |
| CTN: | |
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Reemplazo Normas |
Reemplaza a DIN 51456:2012-10 |
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