DIN EN 62047-10:2012-03
Semiconductor devices - Micro-electromechanical devices - Part 10: Micro-pillar compression test for MEMS materials (IEC 62047-10:2011); German version EN 62047-10:2011
| Fecha edición: |
2012-03-01
En Vigor
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| Idiomas disponibles: | Alemán |
| Resumen: | This document specifies micro-pillar compression test method to measure compressive properties of MEMS materials with high accuracy, repeatability, and moderate effort of specimen fabrication. The uniaxial compressive stress-strain relationship of a specimen is measured, and the compressive modulus of elasticity and yield strength can be obtained. |
| Keywords: | Compression|Compression stresses|Compression tests|Dimensions|Electrical engineering|Materials|Measurement|Measuring techniques|Microelectronics|Microsystem techniques|Pressure tests|Properties|Samples|Semiconductor devices|System engineering|Tensile strain|Tensile testing|Testing|Testing devices|Testing system|Thin films|Thin-film devices|Thin-film technology |
| ICS: | 31.080.01 - Dispositivos semiconductores en general, 31.220.01 - Componentes electromecánicos en general |
| CTN: | |
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Equivalencia Internacional |
Idéntica EN 62047-10:2011 Idéntica IEC 62047-10:2011/COR1:2012 |
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Reemplazo Normas |
Reemplaza a DIN IEC 62047-10:2010-05 |
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