DIN EN 62047-9:2012-03
Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS (IEC 62047-9:2011); German version EN 62047-9:2011
| Fecha edición: |
2012-03-01
En Vigor
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| Idiomas disponibles: | Alemán |
| Resumen: | This standard describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ?m to several millimeters. Diese Norm legt ein Prüfverfahren zur Bondfestigkeit von Full-Wafer-Bondverbindungen, Bondprozesstypen wie Silizium-Fusions-Bonden (Fusionsbonden), anodisches Silizium-Glas-Bonden (anodisches Bonden) usw. sowie anwendbare Strukturgrößen während des MEMS-Fertigungsprozesses bzw. der Assemblierung fest. Die anwendbare Waferdicke liegt im Bereich von 10 µm bis einigen Millimetern. |
| Keywords: | Bonding|Components|Compounds|Compression|Connections|Electrical engineering|Electronic equipment and components|Intermediate layers|Materials|Measurement|Measuring techniques|Microelectronics|Microsystem techniques|Properties|Semiconductor devices|Specification (approval)|Strength of materials|Surface treatment|Symbols|System engineering|Testing|Visual inspection (testing)|Wafers |
| ICS: | 31.080.01 - Dispositivos semiconductores en general, 31.220.01 - Componentes electromecánicos en general |
| CTN: | |
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Equivalencia Internacional |
Idéntica EN 62047-9:2011 Idéntica IEC 62047-9:2011/COR1:2012 |
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Reemplazo Normas |
Reemplaza a DIN IEC 62047-9:2008-03 |
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