DIN EN 62373:2007-01
Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) (IEC 62373:2006); German version EN 62373:2006
| Fecha edición: |
2007-01-01
En Vigor
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|---|---|
| Idiomas disponibles: | Alemán |
| Resumen: | This International Standard provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect transistors (MOSFET). In dieser Internationalen Norm ist ein Verfahren festgelegt, um die Temperatur-Spannungs-Stabilität von MOSFET (en: metal-oxide semiconductor field-effect transistor) zu prüfen (BT-Test; en: bias-temperature test). |
| Keywords: | Checking equipment|Components|Definitions|Electrical engineering|Electronic engineering|Electronic equipment and components|Field-effect transistors|Limits (mathematics)|Measuring equipment|MOSFET|Ratings|Semiconductor devices|Stability|Temperature stress|Testing|Testing devices|Thermal stress|Transistors |
| ICS: | 31.080.30 - Transistores |
| CTN: | |
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Equivalencia Internacional |
Idéntica EN 62373:2006 Idéntica IEC 62373:2006 |
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Reemplazo Normas |
Reemplaza a DIN IEC 62373:2004-09 |
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